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| Guilin Strong Micro-Electronics Co.,Ltd. 2SK3018 SOT-23 (SOT-23 Field Effect Transistors) N-Channel Enhancement-Mode MOS FETs N MOS MAXIMUM MAXIMUM RATINGS Symbol BVDSS VGS IDR IDRM Max 35 +20 100 400 Unit V V mA mA Characteristic Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Current (pulsed) - THERMAL THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA=25 25 Derate above25 25 Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.8 RJA TJ,Tstg 417 Unit mW mW/ /W 150,-55to+150 Guilin Strong Micro-Electronics Co.,Ltd. 2SK3018 DEVICE DEVICE MARKING 2SK3018=KN 2SK3018= ELECTRICAL ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted 25) Characteristic Drain-Source Breakdown Voltage -(ID =10uA ,VGS=0V) Gate Threshold Voltage (ID =100uA ,VGS= VDS) Drain-Source On Voltage -(ID=50mA ,VGS=5V) (ID =400mA ,VGS=10V) Diode Forward Voltage Drop (ISD=200mA ,VGS=0V) Zero Gate Voltage Drain Current (VGS=0V, VDS= BVDSS) (VGS=0V, VDS=0.8BVDSS, TA=125) Gate Body Leakage (VGS=+20V, VDS=0V) Static Drain-Source On-State Resistance (ID=50mA ,VGS=4.5V) (ID=400mA ,VGS=10V) Input Capacitance (VGS=0V, VDS=25V,f=1MHz) Common Source Output Capacitance (VGS=0V, VDS=25V,f=1MHz) Turn-ON Time (VDS=30V, ID=200mA, RGEN=25) Turn-OFF Time (VDS=30V, ID=200mA, RGEN=25) Reverse Recovery Time (ISD=800mA, VGS=0V) 1. FR-5=1.0x0.75x0.062in. 2. Alumina=0.4x0.3x0.024in.99.5%alumina. 3. Pulse Width<300s; Duty Cycle<2.0%. Symbol BVDSS VGS(th) VDS(ON) VSD IDSS IGSS RDS(ON) CISS COSS t(on) t(off) trr Min 35 0.8 -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -- -- 400 Max -- 2 0.375 3.75 1.5 1 500 +100 8 7.5 50 25 20 40 -- Unit V V V V uA nA pF pF ns ns ns Guilin Strong Micro-Electronics Co.,Ltd. 2SK3018 DIMENSION DIMENSION |
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